Research Topics of Takeshi Nishimatsu

[English/Japanese]
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Automatic determination of total-energy surfaces for distortions of ferroelectrics

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Coupling between atomic displacements and strains. After [T. Hashimoto, T. Nishimatsu et al.: Jpn. J. Appl. Phys. 43, 6785 (2004)].

Fast molecular-dynamics simulations for ferroelectric thin-film capacitors

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(a) A thin film in vacuum. (b) Striped domain structure is formed to avoid depolarization field. (c) A thin film with short-circuited perfect electrodes. (d) Doubly periodic boundary condition for simulations of films sandwiched between perfect short-circuited electrodes. (e) A thin film with short-circuited imperfect electrodes. (f) Doubly periodic boundary condition can be also used for the imperfect-electrode case.

Defects and impurities in semiconductors

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Takeshi Nishimatsu
mail: t-nissie {at} imr.tohoku.ac.jp